Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals
Электронный архив РГППУ
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| Заглавие |
Ultrasonic investigation of the Jahn-Teller effect in GaAs semiconductors doped by transition metals
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| Автор |
Averkiev, N. S.
Bersuker, I. B. Gudkov, V. V. Baryshnikov, K. A. Zhevstovskikh, I. V. Mayakin, V. Y. Monakhov, A. M. Sarychev, M. N. Sedov, V. E. Surikov, V. T. |
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| Тематика |
CRYSTAL IMPURITIES
CRYSTAL STRUCTURE GALLIUM ARSENIDE GROUND STATE IMPURITIES POINT DEFECTS SEMICONDUCTING GALLIUM SHEAR FLOW SHEAR WAVES TEMPERATURE DISTRIBUTION TRANSITION METALS ULTRASONIC TESTING GROUND-STATE ENERGIES STABILIZATION ENERGY STRUCTURE AND PROPERTIES TEMPERATURE DEPENDENCE TEMPERATURE INTERVALS THERMAL ACTIVATION MECHANISMS TUNNELING SPLITTINGS ULTRASONIC INVESTIGATIONS JAHN-TELLER EFFECT |
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| Описание |
Transition-metal-doped semiconductor GaAs crystals are used as model systems for spintronic research, as well as in other applications. To explore the structure and properties of such impurities, we extended the methodology of ultrasonic investigation of the Jahn-Teller effect in dielectric impurity-centers to the study of significantly different semiconductor impurities using the GaAs:Cu crystal as an example. Phase velocity and attenuation of ultrasound in this system were measured in the temperature interval of 1.9-80 K at 52 MHz and 156 MHz. The anomaly in the velocity and a peak of attenuation found for the longitudinal and slow shear waves indicate the presence of the Jahn-Teller effect with the e-type local distortions of the CuGa4As impurity complex. The temperature dependence of the elastic modulus and relaxation time shows that below 5 K, the thermal activation mechanism of relaxation is possibly replaced by resonance type transitions. The main parameters of the Jahn-Teller effect, stabilization energy, minima positions and the barrier between them, frequency of pseudorotation of the distortions, and the tunneling splitting of the ground state energy, as well as the constant of exchange interaction between the two holes in Cu2+ centers and the concentration of the centers were estimated. © 2014 AIP Publishing LLC.
Russian Foundation for Basic Research, RFBR |
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| Дата |
2019-07-17T10:00:17Z
2019-07-17T10:00:17Z 2014 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) Published version (info:eu-repo/semantics/publishedVersion) |
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| Идентификатор |
0021-8979
1089-7550 https://www.scopus.com/record/display.uri?origin=resultslist&eid=2-s2.0-84924567624 https://elar.rsvpu.ru/handle/123456789/28135 10.1063/1.4895475 84924567624 2-s2.0-84924567624 Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya, St.-Petersburg, 194021, Russian Federation Institute for Theoretical Chemistry, University of Texas at Austin, Austin, TX 78712, United States Ural Federal University, 19 Mira, Ekaterinburg, 620002, Russian Federation Russian Vocational Pedagogical University, 11 Mashinostroiteley, Ekaterinburg, 620012, Russian Federation Institute for Metal Physics, Ural Division, Russian Academy of Sciences, 18 S. Kovalevskaya, Ekaterinburg, 620990, Russian Federation Institute of Solid State Chemistry, Ural Division, Russian Academy of Sciences, 91 Pervomaiskaya, Ekaterinburg, 620990, Russian Federation Scopus Averkiev, N.S., Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya, St.-Petersburg, 194021, Russian Federation Bersuker, I.B., Institute for Theoretical Chemistry, University of Texas at Austin, Austin, TX 78712, United States Gudkov, V.V., Ural Federal University, 19 Mira, Ekaterinburg, 620002, Russian Federation, Russian Vocational Pedagogical University, 11 Mashinostroiteley, Ekaterinburg, 620012, Russian Federation Baryshnikov, K.A., Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya, St.-Petersburg, 194021, Russian Federation Zhevstovskikh, I.V., Ural Federal University, 19 Mira, Ekaterinburg, 620002, Russian Federation, Institute for Metal Physics, Ural Division, Russian Academy of Sciences, 18 S. Kovalevskaya, Ekaterinburg, 620990, Russian Federation Mayakin, V.Y., Ural Federal University, 19 Mira, Ekaterinburg, 620002, Russian Federation Monakhov, A.M., Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya, St.-Petersburg, 194021, Russian Federation Sarychev, M.N., Ural Federal University, 19 Mira, Ekaterinburg, 620002, Russian Federation Sedov, V.E., Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya, St.-Petersburg, 194021, Russian Federation Surikov, V.T., Institute of Solid State Chemistry, Ural Division, Russian Academy of Sciences, 91 Pervomaiskaya, Ekaterinburg, 620990, Russian Federation WOS:000342833700041 000342833700041 |
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| Язык |
en
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| Права |
Restricted accedd (info:eu-repo/semantics/restrictedAccess)
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text/html
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| Охват |
RSVPU
SCOPUS |
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| Издатель |
AIP Publishing
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| Источник |
Journal of Applied Physics
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