Destruction of LED heterostructures under high-current electron beam irradiation
Электронный архив ТПУ
Информация об архиве | Просмотр оригиналаПоле | Значение | |
Заглавие |
Destruction of LED heterostructures under high-current electron beam irradiation
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Автор |
Zixuan Li
Jiyao Xian Sysoyeva, S. G. |
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Тематика |
светодиодные гетероструктуры
облучение электронные пучки эпитаксильные слои сапфировые подложки |
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Описание |
This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.
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Дата |
2019-08-06T07:10:07Z
2019-08-06T07:10:07Z 2019 |
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Тип |
Conference Paper
Published version (info:eu-repo/semantics/publishedVersion) Conference paper (info:eu-repo/semantics/conferencePaper) |
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Идентификатор |
Zixuan Li. Destruction of LED heterostructures under high-current electron beam irradiation / Zixuan Li, Jiyao Xian, S. G. Sysoyeva // IOP Conference Series: Materials Science and Engineering. — Bristol : IOP Publishing, 2019. — Vol. 511 : Perspective Materials of Constructional and Medical Purpose : International Scientific and Technical Youth Conference, 26–30 November 2018, Tomsk, Russian Federation : [proceedings]. — [012004, 5 p.].
http://earchive.tpu.ru/handle/11683/55437 10.1088/1757-899X/511/1/012004 |
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Язык |
en
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Связанные ресурсы |
IOP Conference Series: Materials Science and Engineering. Vol. 511 : Perspective Materials of Constructional and Medical Purpose. — Bristol, 2019.
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Права |
Open access (info:eu-repo/semantics/openAccess)
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Издатель |
IOP Publishing
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