Просмотреть запись

Destruction of LED heterostructures under high-current electron beam irradiation

Электронный архив ТПУ

Информация об архиве | Просмотр оригинала
 
 
Поле Значение
 
Заглавие Destruction of LED heterostructures under high-current electron beam irradiation
 
Автор Zixuan Li
Jiyao Xian
Sysoyeva, S. G.
 
Тематика светодиодные гетероструктуры
облучение
электронные пучки
эпитаксильные слои
сапфировые подложки
 
Описание This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.
 
Дата 2019-08-06T07:10:07Z
2019-08-06T07:10:07Z
2019
 
Тип Conference Paper
Published version (info:eu-repo/semantics/publishedVersion)
Conference paper (info:eu-repo/semantics/conferencePaper)
 
Идентификатор Zixuan Li. Destruction of LED heterostructures under high-current electron beam irradiation / Zixuan Li, Jiyao Xian, S. G. Sysoyeva // IOP Conference Series: Materials Science and Engineering. — Bristol : IOP Publishing, 2019. — Vol. 511 : Perspective Materials of Constructional and Medical Purpose : International Scientific and Technical Youth Conference, 26–30 November 2018, Tomsk, Russian Federation : [proceedings]. — [012004, 5 p.].
http://earchive.tpu.ru/handle/11683/55437
10.1088/1757-899X/511/1/012004
 
Язык en
 
Связанные ресурсы IOP Conference Series: Materials Science and Engineering. Vol. 511 : Perspective Materials of Constructional and Medical Purpose. — Bristol, 2019.
 
Права Open access (info:eu-repo/semantics/openAccess)
 
Издатель IOP Publishing