Study of growth temperature effect on wetting layer during In/GaAs droplet epitaxy
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
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Study of growth temperature effect on wetting layer during In/GaAs droplet epitaxy
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| Автор |
Eremenko, M. M.
Balakirev, S. V. Chernenko, N. E. Ageev, O. A. Solodovnik, M. S. |
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| Описание |
This work was supported by the Russian Science Foundation Grant No. 15-19-10006. The results were obtained using the equipment of the Research and Education Center and Center for Collective Use "Nanotechnologies" of Southern Federal University.
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| Дата |
2019-12-19T12:26:02Z
2019-12-19T12:26:02Z 2019 |
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| Тип |
Conference Paper
Conference object (info:eu-repo/semantics/conferenceObject) Published version (info:eu-repo/semantics/publishedVersion) |
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| Идентификатор |
Study of growth temperature effect on wetting layer during In/GaAs droplet epitaxy / M. M. Eremenko, S. V. Balakirev, N. E. Chernenko, O. A. Ageev, M. S. Solodovnik // Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. Abstract Book of Joint International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2019. — P. 150.
978-5-9500624-2-1 http://elar.urfu.ru/handle/10995/79028 |
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| Язык |
en
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| Связанные ресурсы |
info:eu-repo/grantAgreement/RSF//15-19-10006
Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. — Ekaterinburg, 2019 |
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| Формат |
application/pdf
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| Издатель |
Ural Federal University
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