Resistive switching and ferroelectricity in HfO2 thin films
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
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Resistive switching and ferroelectricity in HfO2 thin films
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| Автор |
Lyapunov, N.
Yau, H. M. Dai, J. Y. |
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| Дата |
2019-12-19T12:26:28Z
2019-12-19T12:26:28Z 2019 |
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| Тип |
Conference Paper
Conference object (info:eu-repo/semantics/conferenceObject) Published version (info:eu-repo/semantics/publishedVersion) |
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| Идентификатор |
Lyapunov N. Resistive switching and ferroelectricity in HfO2 thin films / N. Lyapunov, H. M. Yau, J. Y. Dai // Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. Abstract Book of Joint International Conference (Ekaterinburg, August 25-28, 2019). — Ekaterinburg, Ural Federal University, 2019. — P. 111.
978-5-9500624-2-1 http://elar.urfu.ru/handle/10995/79237 |
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| Язык |
en
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| Связанные ресурсы |
Scanning Probe Microscopy. Russia-China Workshop on Dielectric and Ferroelectric Materials. — Ekaterinburg, 2019
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| Формат |
application/pdf
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| Издатель |
Ural Federal University
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