In-Band Pumped Continuous-Wave Lasers Based on Ho:KY(WO4)2 Crystal and Ho:KGdYbY(WO4)2 Epitaxial Layer
Репозиторий БНТУ
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In-Band Pumped Continuous-Wave Lasers Based on Ho:KY(WO4)2 Crystal and Ho:KGdYbY(WO4)2 Epitaxial Layer
Непрерывные лазеры на кристалле Ho:KY(WO4)2 и монокристаллическом слое Ho:KGdYbY(WO4)2 при резонансной накачке |
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| Автор |
Dernovich, O. P.
Gusakova, N. V. Kisel, V. E. Kravtsov, A. V. Guretsky, S. A. Pavlyuk, A. A. Kuleshov, N. V. |
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| Описание |
2 μm lasers are in demand for a number of practical applications, such as environmental monitoring, remote sensing, medicine, material processing, and are also used as a pump sources for optical parametric generators. Crystals of double potassium tungstates doped with ions of rare-earth elements were shown to be promising materials both for the creation of classical solid-state lasers and waveguide lasers. The aim of this work was to develop a tunable pump laser in the spectral region of 1.9 μm based on double tungstate crystals doped with thulium ions and to study the lasing characteristics of a Ho:KY(WO4)2 crystal and a Ho:KGdYbY(WO4)2 single-crystal epitaxial layer under in-band pumping. With a Ho(1at.%):KY(WO4)2 crystal, continuous wave low-threshold lasing with an output power of 85 mW with a slope efficiency of 54 % at 2074 nm was achieved. For the first time to our knowledge, continuous wave laser generation in a waveguide configuration is realized in a single-crystal layer of potassium tungstate doped with holmium ions grown by liquid-phase epitaxy. The maximum output power at a wavelength of 2055 nm was 16.5 mW.
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2020-12-18T07:32:41Z
2020-12-18T07:32:41Z 2020 |
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Article
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| Идентификатор |
Dernovich, O. P. In-Band Pumped Continuous-Wave Lasers Based on Ho:KY(WO4)2 Crystal and Ho:KGdYbY(WO4)2 Epitaxial Layer = Непрерывные лазеры на кристалле Ho:KY(WO4)2 и монокристаллическом слое Ho:KGdYbY(WO4)2 при резонансной накачке / O. P. Dernovich [et al.] // Приборы и методы измерений : научно-технический журнал. – 2020. – Т. 11, № 4. – С. 264-271.
https://rep.bntu.by/handle/data/82704 10.21122/2220-9506-2020-11-4-264-271 |
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| Язык |
en
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| Охват |
Минск
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| Издатель |
БНТУ
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