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Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments

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Заглавие Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments
 
Автор Kovalev, M.
Podlesnykh, I.
Nastulyavichus, A.
Stsepuro, N.
Mushkarina, I.
Platonov, P.
Terukov, E.
Abolmasov, S.
Dunaev, A.
Akhmatkhanov, A.
Shur, V.
Kudryashov, S.
 
Тематика CHEMICAL ETCHING
LASER TEXTURING
LIGHT-TRAPPING
REFLECTION COEFFICIENT
SURFACE MICROSTRUCTURES
ETCHING
MORPHOLOGY
SILICON WAFERS
SURFACE MORPHOLOGY
BROADBAND LIGHT
CHAOTICS
CHEMICAL ETCHING
CHEMICAL TREATMENTS
LASER TEXTURING
LASER TREATMENT
LIGHT TRAPPING STRUCTURES
LIGHT-TRAPPING
SURFACE MICROSTRUCTURES
THIN FILM SILICON
REFLECTION
 
Описание Light-trapping structures formed on surfaces of various materials have attracted much attention in recent years due to their important role in many applications of science and technology. This article discusses various methods for manufacturing light-trapping “black” silicon, namely laser, chemical and hybrid chemical/laser ones. In addition to the widely explored laser texturing and chemical etching methods, we develop a hybrid chemical/laser texturing method, consisting in laser post-texturing of pyramidal structures obtained after chemical etching. After laser treatments the surface morphology was represented by a chaotic relief of microcones, while after chemical treatment it acquired a chaotic pyramidal relief. Moreover, laser texturing of preliminarily chemically microtextured silicon wafers is shown to take five-fold less time compared to bare flat silicon. In this case, the chemically/laser-treated samples exhibit average total reflectance in the spectral range of 250–1100 nm lower by 7–10% than after the purely chemical treatment. © 2023 by the authors.
Ministry of Education and Science of the Russian Federation, Minobrnauka; Ministry of Science and Higher Education of the Russian Federation: 075-15-2021-677
We thank the Ural Center for Shared Use “Modern nanotechnology” of Ural Federal University (Reg.#2968), which is supported by the Ministry of Science and Higher Education RF (Project #075-15-2021-677) for the provided research equipment; and Evgeny Kuzmin from Lebedev Physical Institute for the preparation .
This research was funded by the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program).
 
Дата 2024-04-05T16:18:59Z
2024-04-05T16:18:59Z
2023
 
Тип Article
Journal article (info:eu-repo/semantics/article)
|info:eu-repo/semantics/publishedVersion
 
Идентификатор Kovalev, M, Podlesnykh, I, Nastulyavichus, A, Stsepuro, N, Mushkarina, I, Platonov, P, Terukov, E, Abolmasov, S, Dunaev, A, Akhmatkhanov, A, Shur, V & Kudryashov, S 2023, 'Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments', Materials, Том. 16, № 6, 2350. https://doi.org/10.3390/ma16062350
Kovalev, M., Podlesnykh, I., Nastulyavichus, A., Stsepuro, N., Mushkarina, I., Platonov, P., Terukov, E., Abolmasov, S., Dunaev, A., Akhmatkhanov, A., Shur, V., & Kudryashov, S. (2023). Efficient Broadband Light-Trapping Structures on Thin-Film Silicon Fabricated by Laser, Chemical and Hybrid Chemical/Laser Treatments. Materials, 16(6), [2350]. https://doi.org/10.3390/ma16062350
1996-1944
Final
All Open Access, Gold, Green
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85151509978&doi=10.3390%2fma16062350&partnerID=40&md5=1e5bec93753518b1c1f594ea8e8add96
https://www.mdpi.com/1996-1944/16/6/2350/pdf?version=1678866072
http://elar.urfu.ru/handle/10995/130365
10.3390/ma16062350
85151509978
000959743200001
 
Язык en
 
Права Open access (info:eu-repo/semantics/openAccess)
cc-by
https://creativecommons.org/licenses/by/4.0/
 
Формат application/pdf
 
Издатель MDPI
 
Источник Materials
Materials