Plasma Enhanced High-Rate Deposition of Advanced Film Materials by Metal Reactive Evaporation in Organosilicon Vapors
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
| Заглавие |
Plasma Enhanced High-Rate Deposition of Advanced Film Materials by Metal Reactive Evaporation in Organosilicon Vapors
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| Автор |
Menshakov, A.
Bruhanova, Y. Skorynina, P. Medvedev, A. |
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| Тематика |
ANODIC EVAPORATION
FILM MEMBRANES HOLLOW CATHODE ARC ION ASSISTANCE NANOCOMPOSITE COATINGS PECVD PVD TISICN CATHODES CHEMICAL ACTIVATION COATINGS DEPOSITION RATES DETERIORATION ELECTRIC DISCHARGES EVAPORATION GAS MIXTURES HARDNESS NANOCOMPOSITES SILICON COMPOUNDS ANODIC EVAPORATION FILM MATERIALS FILM MEMBRANES GASES MIXTURE HEXAMETHYLDISILAZANE HIGH-RATE DEPOSITION HOLLOW CATHODE ARC ION ASSISTANCE NANO-COMPOSITE COATING REACTIVE EVAPORATION TITANIUM COMPOUNDS |
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| Описание |
Dense homogeneous nanocomposite TiSiCN coatings with a thickness of up to 15 microns and a hardness of up to 42 GPa were obtained by the method of reactive titanium evaporation in a hollow cathode arc discharge in an Ar + C2H2 + N2-gas mixture with the addition of hexamethyldisilazane (HMDS). An analysis of the plasma composition showed that this method allowed for a wide range of changes in the activation degree of all components of the gas mixture, providing a high (up to 20 mA/cm2) ion current density. It is possible to widely change the chemical composition, microstructure, deposition rate, and properties of coatings obtained by this method, by changing the pressure, composition, and activation degree of the vapor–gas mixture. An increase in the fluxes of C2H2, N2, HMDS, and discharge current leads to an increase in the rate of coating formation. However, the optimal coatings from the point of view of microhardness were obtained at a low discharge current of 10 A and relatively low contents of C2H2 (1 sccm) and HMDS (0.3 g/h), exceeding which leads to a decrease in the hardness of the films and the deterioration of their quality, which can be explained by the excessive ionic exposure and the non-optimal chemical composition of the coatings. © 2023 by the authors.
Russian Science Foundation, RSF: 20-79-10059 This research was funded by the Russian Science Fund, grant number 20-79-10059. |
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| Дата |
2024-04-05T16:20:22Z
2024-04-05T16:20:22Z 2023 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) |info:eu-repo/semantics/publishedVersion |
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| Идентификатор |
Menshakov, A, Bruhanova, Y, Skorynina, P & Medvedev, A 2023, 'Plasma Enhanced High-Rate Deposition of Advanced Film Materials by Metal Reactive Evaporation in Organosilicon Vapors', Membranes, Том. 13, № 4, 374. https://doi.org/10.3390/membranes13040374
Menshakov, A., Bruhanova, Y., Skorynina, P., & Medvedev, A. (2023). Plasma Enhanced High-Rate Deposition of Advanced Film Materials by Metal Reactive Evaporation in Organosilicon Vapors. Membranes, 13(4), [374]. https://doi.org/10.3390/membranes13040374 2077-0375 Final All Open Access, Gold, Green https://www.scopus.com/inward/record.uri?eid=2-s2.0-85153876031&doi=10.3390%2fmembranes13040374&partnerID=40&md5=82b9659d2a5ce519bcd2a515858857f3 https://www.mdpi.com/2077-0375/13/4/374/pdf?version=1679884870 http://elar.urfu.ru/handle/10995/130428 10.3390/membranes13040374 85153876031 000977516100001 |
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| Язык |
en
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| Связанные ресурсы |
info:eu-repo/grantAgreement/RSF//20-79-10059
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| Права |
Open access (info:eu-repo/semantics/openAccess)
cc-by https://creativecommons.org/licenses/by/4.0/ |
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| Формат |
application/pdf
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| Издатель |
MDPI
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| Источник |
Membranes
Membranes |
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