Schottky-Diode Design for Future High-Speed Telecommunications
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
| Заглавие |
Schottky-Diode Design for Future High-Speed Telecommunications
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| Автор |
Wong, C. -H.
Lam, L. -Y. F. Hu, X. Tsui, C. -P. Zatsepin, A. F. |
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| Тематика |
2D MATERIALS
DIELECTRIC PROPERTIES ENERGY HARVESTING SYSTEM SCHOTTKY DIODE |
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| Описание |
The impact of 5G communication is expected to be widespread and transformative. It promises to provide faster mobile broadband speeds, lower latency, improved network reliability and capacity, and more efficient use of wireless technologies. The Schottky diode, a BN/GaN layered composite contacting bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences the optical properties of the layered composite. The relative dielectric constant of BN/GaN layered composite as a function of layer-to-layer separation is investigated where the optimized dielectric constant is ~2.5. To push the dielectric constant approaching ~1 for high-speed telecommunication, we upgrade our BN-based Schottky diode via nanostructuring, and we find that the relative dielectric constant of BN monolayer (semiconductor side) can be minimized to ~1.5 only if it is deposited on an aluminum monolayer (metal side). It is rare to find a semiconductor with a dielectric constant close to 1, and our findings may push the cut-off frequency of the Al/BN-based rectenna to the high-band 5G network. © 2023 by the authors.
Ministry of Education and Science of the Russian Federation, Minobrnauka: 4.38; Hong Kong Polytechnic University, PolyU; Council on grants of the President of the Russian Federation This research was funded by Russian Federation for support (Ural Federal University Program of Development within the Priority-2030 Program) and the Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University. A.F.Z. thanks the Ministry of Science and Higher Education of the Russian Federation for support (Ural Federal University Program of Development within the Priority-2030 Program, project. 4.38). C.H.W thanks Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University. The authors would like to thank for the financial support from the Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University. The APC was funded by Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University. We thank the Department of Industrial and Systems Engineering and Research Institute for Advanced Manufacturing at The Hong Kong Polytechnic University. We also thank the Ministry of Science and Higher Education of the Russian Federation for support. |
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| Дата |
2024-04-05T16:22:02Z
2024-04-05T16:22:02Z 2023 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) |info:eu-repo/semantics/publishedVersion |
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| Идентификатор |
Wong, C-H, Lam, L-YF, Hu, X, Tsui , C-P & Zatsepin, A 2023, 'Schottky-Diode Design for Future High-Speed Telecommunications', Nanomaterials, Том. 13, № 9, 1448. https://doi.org/10.3390/nano13091448
Wong, C-H., Lam, L-Y. F., Hu, X., Tsui , C-P., & Zatsepin, A. (2023). Schottky-Diode Design for Future High-Speed Telecommunications. Nanomaterials, 13(9), [1448]. https://doi.org/10.3390/nano13091448 2079-4991 Final All Open Access, Gold, Green https://www.scopus.com/inward/record.uri?eid=2-s2.0-85159181381&doi=10.3390%2fnano13091448&partnerID=40&md5=2b6944048c495c0f7c9939b2896f7ca6 https://www.mdpi.com/2079-4991/13/9/1448/pdf?version=1682316977 http://elar.urfu.ru/handle/10995/130476 10.3390/nano13091448 85159181381 000987372100001 |
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| Язык |
en
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| Права |
Open access (info:eu-repo/semantics/openAccess)
cc-by https://creativecommons.org/licenses/by/4.0/ |
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| Формат |
application/pdf
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| Издатель |
MDPI
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| Источник |
Nanomaterials
Nanomaterials |
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