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Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite

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Заглавие Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite
 
Автор Abramov, A.
Slautin, B.
Pryakhina, V.
Shur, V.
Kholkin, A.
Alikin, D.
 
Тематика CAFM
DEFECTS
LEAKAGE CURRENT
LOCAL SWITCHING
POLARIZATION REVERSAL
SCANNING PROBE MICROSCOPY
BANDWIDTH
BISMUTH
DIGITAL STORAGE
ELECTRIC FIELDS
FERRITE
FERROELECTRIC MATERIALS
FERROELECTRICITY
HYDROPHOBICITY
POLARIZATION
SCHOTTKY BARRIER DIODES
BISMUTH FERRITES
CONDUCTIVE ATOMIC FORCE MICROSCOPY
ELECTRONIC TRANSPORT
FERROELECTRICS MATERIALS
LOCAL SWITCHING
POLARIZATION REVERSALS
POLYCRYSTALLINE
RESISTIVE SWITCHING
SCANNING-PROBE MICROSCOPY
SPATIALLY RESOLVED
SCANNING PROBE MICROSCOPY
 
Описание Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special interest due to the combination of high spontaneous polarization and antiferromagnetism, implying the possibility to provide multiple physical mechanisms for data storage and operations. Macroscopic conductivity measurements are often hampered to unambiguously characterize the electric transport, because of the strong influence of the diverse material microstructure. Here, we studied the electronic transport and resistive switching phenomena in polycrystalline bismuth ferrite using advanced conductive atomic force microscopy (CAFM) at different temperatures and electric fields. The new approach to the CAFM spectroscopy and corresponding data analysis are proposed, which allow deep insight into the material band structure at high lateral resolution. Contrary to many studies via macroscopic methods, postulating electromigration of the oxygen vacancies, we demonstrate resistive switching in bismuth ferrite to be caused by the pure electronic processes of trapping/releasing electrons and injection of the electrons by the scanning probe microscopy tip. The electronic transport was shown to be comprehensively described by the combination of the space charge limited current model, while a Schottky barrier at the interface is less important due to the presence of the built-in subsurface charge. © 2023 by the authors.
Ministry of Education and Science of the Russian Federation, Minobrnauka; Ministry of Science and Higher Education of the Russian Federation: 075-15-2021-677
The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged.
The equipment of the Ural Center for Shared Use “Modern nanotechnology” of Ural Federal University (Reg. # 2968) was used, which is supported by the Ministry of Science and Higher Education RF (Project # 075-15-2021-677). Authors acknowledge Konstantin Romanyuk for the useful discussion.
 
Дата 2024-04-05T16:26:32Z
2024-04-05T16:26:32Z
2023
 
Тип Article
Journal article (info:eu-repo/semantics/article)
|info:eu-repo/semantics/publishedVersion
 
Идентификатор Abramov, A, Slautin, B, Pryakhina, V, Shur, V, Kholkin, A & Alikin, D 2023, 'Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite', Sensors, Том. 23, № 1, 526. https://doi.org/10.3390/s23010526
Abramov, A., Slautin, B., Pryakhina, V., Shur, V., Kholkin, A., & Alikin, D. (2023). Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite. Sensors, 23(1), [526]. https://doi.org/10.3390/s23010526
1424-8220
Final
All Open Access, Gold, Green
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85145979831&doi=10.3390%2fs23010526&partnerID=40&md5=fc696e37def21147ef3a66e3ff9b262b
https://www.mdpi.com/1424-8220/23/1/526/pdf?version=1672737139
http://elar.urfu.ru/handle/10995/130581
10.3390/s23010526
85145979831
000909827500001
 
Язык en
 
Права Open access (info:eu-repo/semantics/openAccess)
cc-by
https://creativecommons.org/licenses/by/4.0/
 
Формат application/pdf
 
Издатель MDPI
 
Источник Sensors
Sensors