Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
| Заглавие |
Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite
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| Автор |
Abramov, A.
Slautin, B. Pryakhina, V. Shur, V. Kholkin, A. Alikin, D. |
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| Тематика |
CAFM
DEFECTS LEAKAGE CURRENT LOCAL SWITCHING POLARIZATION REVERSAL SCANNING PROBE MICROSCOPY BANDWIDTH BISMUTH DIGITAL STORAGE ELECTRIC FIELDS FERRITE FERROELECTRIC MATERIALS FERROELECTRICITY HYDROPHOBICITY POLARIZATION SCHOTTKY BARRIER DIODES BISMUTH FERRITES CONDUCTIVE ATOMIC FORCE MICROSCOPY ELECTRONIC TRANSPORT FERROELECTRICS MATERIALS LOCAL SWITCHING POLARIZATION REVERSALS POLYCRYSTALLINE RESISTIVE SWITCHING SCANNING-PROBE MICROSCOPY SPATIALLY RESOLVED SCANNING PROBE MICROSCOPY |
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| Описание |
Ferroelectric materials attract much attention for applications in resistive memory devices due to the large current difference between insulating and conductive states and the ability of carefully controlling electronic transport via the polarization set-up. Bismuth ferrite films are of special interest due to the combination of high spontaneous polarization and antiferromagnetism, implying the possibility to provide multiple physical mechanisms for data storage and operations. Macroscopic conductivity measurements are often hampered to unambiguously characterize the electric transport, because of the strong influence of the diverse material microstructure. Here, we studied the electronic transport and resistive switching phenomena in polycrystalline bismuth ferrite using advanced conductive atomic force microscopy (CAFM) at different temperatures and electric fields. The new approach to the CAFM spectroscopy and corresponding data analysis are proposed, which allow deep insight into the material band structure at high lateral resolution. Contrary to many studies via macroscopic methods, postulating electromigration of the oxygen vacancies, we demonstrate resistive switching in bismuth ferrite to be caused by the pure electronic processes of trapping/releasing electrons and injection of the electrons by the scanning probe microscopy tip. The electronic transport was shown to be comprehensively described by the combination of the space charge limited current model, while a Schottky barrier at the interface is less important due to the presence of the built-in subsurface charge. © 2023 by the authors.
Ministry of Education and Science of the Russian Federation, Minobrnauka; Ministry of Science and Higher Education of the Russian Federation: 075-15-2021-677 The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged. The equipment of the Ural Center for Shared Use “Modern nanotechnology” of Ural Federal University (Reg. # 2968) was used, which is supported by the Ministry of Science and Higher Education RF (Project # 075-15-2021-677). Authors acknowledge Konstantin Romanyuk for the useful discussion. |
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| Дата |
2024-04-05T16:26:32Z
2024-04-05T16:26:32Z 2023 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) |info:eu-repo/semantics/publishedVersion |
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| Идентификатор |
Abramov, A, Slautin, B, Pryakhina, V, Shur, V, Kholkin, A & Alikin, D 2023, 'Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite', Sensors, Том. 23, № 1, 526. https://doi.org/10.3390/s23010526
Abramov, A., Slautin, B., Pryakhina, V., Shur, V., Kholkin, A., & Alikin, D. (2023). Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite. Sensors, 23(1), [526]. https://doi.org/10.3390/s23010526 1424-8220 Final All Open Access, Gold, Green https://www.scopus.com/inward/record.uri?eid=2-s2.0-85145979831&doi=10.3390%2fs23010526&partnerID=40&md5=fc696e37def21147ef3a66e3ff9b262b https://www.mdpi.com/1424-8220/23/1/526/pdf?version=1672737139 http://elar.urfu.ru/handle/10995/130581 10.3390/s23010526 85145979831 000909827500001 |
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| Язык |
en
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| Права |
Open access (info:eu-repo/semantics/openAccess)
cc-by https://creativecommons.org/licenses/by/4.0/ |
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| Формат |
application/pdf
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| Издатель |
MDPI
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| Источник |
Sensors
Sensors |
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