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Realizing High Brightness Quasi-2D Perovskite Light-Emitting Diodes with Reduced Efficiency Roll-Off via Multifunctional Interface Engineering

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Заглавие Realizing High Brightness Quasi-2D Perovskite Light-Emitting Diodes with Reduced Efficiency Roll-Off via Multifunctional Interface Engineering
 
Автор Lin, Y. -K.
Chen, C. -H.
Wang, Y. -Y.
Yu, M. -H.
Yang, J. -W.
Ni, I. -C.
Lin, B. -H.
Zhidkov, I. S.
Kurmaev, E. Z.
Lu, Y. -J.
Chueh, C. -C.
 
Тематика EFFICIENCY ROLL-OFF
HOLE BLOCKING
INTERFACE ENGINEERING
LIGHT-EMITTING DIODES
QUASI-2D PEROVSKITES
ELECTRONIC PROPERTIES
ENERGY TRANSFER
LUMINANCE
ORGANIC LIGHT EMITTING DIODES (OLED)
PHOSPHORUS COMPOUNDS
QUANTUM EFFICIENCY
SURFACE DEFECTS
EFFICIENCY ROLL-OFF
HIGH BRIGHTNESS
HOLE-BLOCKING
INTERFACE ENGINEERING
LIGHTEMITTING DIODE
LOW EFFICIENCY ROLL OFFS
MULTI-FUNCTIONAL INTERFACES
PEROVSKITE FILMS
QUASI-2D
QUASI-2D PEROVSKITE
PEROVSKITE
 
Описание Quasi-2D perovskites have recently flourished in the field of luminescence due to the quantum-confinement effect and the efficient energy transfer between different n phases resulting in exceptional optical properties. However, owing to the lower conductivity and poor charge injection, quasi-2D perovskite light-emitting diodes (PeLEDs) typically suffer from low brightness and high-efficiency roll-off at high current densities compared to 3D perovskite-based PeLEDs, which is undoubtedly one of the most critical issues in this field. In this work, quasi-2D PeLEDs with high brightness, reduced trap density, and low-efficiency roll-off are successfully demonstrated by introducing a thin layer of conductive phosphine oxide at the perovskite/electron transport layer interface. The results surprisingly show that this additional layer does not improve the energy transfer between multiple quasi-2D phases in the perovskite film, but purely improves the electronic properties of the perovskite interface. On the one hand, it passivates the surface defects of the perovskite film; on the other hand, it promotes electron injection and prevents hole leakage across this interface. As a result, the modified quasi-2D pure Cs-based device shows a maximum brightness of > 70,000 cd m−2 (twice that of the control device), a maximum external quantum efficiency (EQE) of > 10% and a much lower efficiency roll-off at high bias voltages. © 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.
Ministry of Education, MOE: 111L9006; National Science and Technology Council, NSTC: 110‐2923‐E‐002‐007‐MY3, 111‐2124‐M‐002‐021, 111‐2628‐E‐002‐009, 111‐2634‐F‐002‐016, 111‐2923‐E‐002‐006‐MY3; Academia Sinica, AS: AS-CDA-108-M08; Russian Foundation for Basic Research, РФФИ: 21‐52‐52002, AAAA‐A18–118020190098‐5; Ministry of Education and Science of the Russian Federation, Minobrnauka; National Taiwan University, NTU: 112L7810
C.-C.C. thanks financial supports from the Ministry of Education (111L9006), the National Science and Technology Council (NSTC) in Taiwan (111-2634-F-002-016, 111-2628-E-002-009, 111-2124-M-002-021, 110-2923-E-002-007-MY3, 111-2923-E-002-006-MY3), and Top University Project of National Taiwan University (112L7810). Y.J.L. acknowledge financial supports from the NSTC in Taiwan (109-2112-M-001-043-MY3, 110-2124-M-001-008-MY3) and Academia Sinica (AS-CDA-108-M08). I.S.Z. thank financial supports from Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program). E.Z.K. gratefully acknowledge Russian Foundation for Basic Research (21-52-52002) and Ministry of Science and Higher Education of the Russian Federation (theme “Electron” No. AAAA-A18–118020190098-5).
C.‐C.C. thanks financial supports from the Ministry of Education (111L9006), the National Science and Technology Council (NSTC) in Taiwan (111‐2634‐F‐002‐016, 111‐2628‐E‐002‐009, 111‐2124‐M‐002‐021, 110‐2923‐E‐002‐007‐MY3, 111‐2923‐E‐002‐006‐MY3), and Top University Project of National Taiwan University (112L7810). Y.J.L. acknowledge financial supports from the NSTC in Taiwan (109‐2112‐M‐001‐043‐MY3, 110‐2124‐M‐001‐008‐MY3) and Academia Sinica (AS‐CDA‐108‐M08). I.S.Z. thank financial supports from Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority‐2030 Program). E.Z.K. gratefully acknowledge Russian Foundation for Basic Research (21‐52‐52002) and Ministry of Science and Higher Education of the Russian Federation (theme “Electron” No. AAAA‐A18–118020190098‐5).
 
Дата 2024-04-05T16:27:09Z
2024-04-05T16:27:09Z
2023
 
Тип Article
Journal article (info:eu-repo/semantics/article)
|info:eu-repo/semantics/publishedVersion
 
Идентификатор Lin, Y, Chen, C, Wang, Y, Yu, M, Yang, J, Ni, I, Lin, B, Zhidkov, IS, Kurmaev, EZ, Lu, Y & Chueh, C 2023, 'Realizing High Brightness Quasi‐2D Perovskite Light‐Emitting Diodes with Reduced Efficiency Roll‐Off via Multifunctional Interface Engineering', Advanced Science, Том. 10, № 26, 2302232. https://doi.org/10.1002/advs.202302232, https://doi.org/10.1002/advs.v10.26
Lin, Y., Chen, C., Wang, Y., Yu, M., Yang, J., Ni, I., Lin, B., Zhidkov, I. S., Kurmaev, E. Z., Lu, Y., & Chueh, C. (2023). Realizing High Brightness Quasi‐2D Perovskite Light‐Emitting Diodes with Reduced Efficiency Roll‐Off via Multifunctional Interface Engineering. Advanced Science, 10(26), [2302232]. https://doi.org/10.1002/advs.202302232, https://doi.org/10.1002/advs.v10.26
2198-3844
Final
All Open Access, Gold, Green
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85163862794&doi=10.1002%2fadvs.202302232&partnerID=40&md5=96cd3bd9f7139fa7752733b5120f1dbf
https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/advs.202302232
http://elar.urfu.ru/handle/10995/130605
10.1002/advs.202302232
85163862794
001020881000001
 
Язык en
 
Права Open access (info:eu-repo/semantics/openAccess)
cc-by
https://creativecommons.org/licenses/by/4.0/
 
Формат application/pdf
 
Издатель John Wiley and Sons Inc
 
Источник Advanced Science
Advanced Science