Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
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Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals
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| Автор |
Marchenkov, V. V.
Lukoyanov, A. V. Baidak, S. T. Perevalova, A. N. Fominykh, B. M. Naumov, S. V. Marchenkova, E. B. |
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| Тематика |
2D MATERIALS
BI2SE3 BI2TE3 CURRENT CARRIER CONCENTRATION DFT ELECTRONIC STRUCTURE HALL EFFECT MATERIALS INFORMATICS TOPOLOGICAL INSULATOR TOPOLOGICAL RESISTIVITY BISMUTH COMPOUNDS CARRIER CONCENTRATION CELLS CRYSTAL STRUCTURE CYTOLOGY DENSITY FUNCTIONAL THEORY ELECTRIC INSULATORS FERMI LEVEL HALL EFFECT SELENIUM COMPOUNDS SINGLE CRYSTALS TELLURIUM COMPOUNDS TEMPERATURE TOPOLOGICAL INSULATORS TOPOLOGY 2D MATERIAL CURRENT CARRIER CONCENTRATION CURRENT CARRIERS DENSITIES OF STATE DFT ELECTRONIC.STRUCTURE INCREASING TEMPERATURES MATERIAL INFORMATICS TOPOLOGICAL INSULATORS TOPOLOGICAL RESISTIVITY ELECTRONIC STRUCTURE |
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| Описание |
The electrical resistivity and the Hall effect of topological insulator Bi2Te3 and Bi2Se3 single crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to 10 T. Theoretical calculations of the electronic structure of these compounds were carried out in density functional approach, taking into account spin–orbit coupling and crystal structure data for temperatures of 5, 50 and 300 K. A clear correlation was found between the density of electronic states at the Fermi level and the current carrier concentration. In the case of Bi2Te3, the density of states at the Fermi level and the current carrier concentration increase with increasing temperature, from 0.296 states eV−1 cell−1 (5 K) to 0.307 states eV−1 cell−1 (300 K) and from 0.9 × 1019 cm−3 (5 K) to 2.6 × 1019 cm−3 (300 K), respectively. On the contrary, in the case of Bi2Se3, the density of states decreases with increasing temperature, from 0.201 states eV−1 cell−1 (5 K) to 0.198 states eV−1 cell−1 (300 K), and, as a consequence, the charge carrier concentration also decreases from 2.94 × 1019 cm−3 (5 K) to 2.81 × 1019 cm−3 (300 K). © 2023 by the authors.
Ministry of Education and Science of the Russian Federation, Minobrnauka: 122021000036-3, 122021000039-4; Russian Science Foundation, RSF: 22-42-02021 This research was supported by Russian Science Foundation (project No. 22-42-02021) for the experimental and theoretical studies in Section 1, Section 2, Section 3.1 and Section 3.2 ; the analysis of current carrier concentration (Section 3.3) was done within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes «Spin», № 122021000036-3 and «Electron», № 122021000039-4). |
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| Дата |
2024-04-05T16:35:01Z
2024-04-05T16:35:01Z 2023 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) |info:eu-repo/semantics/publishedVersion |
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| Идентификатор |
Marchenkov, VV, Lukoyanov, AV, Baidak, ST, Perevalova, AN, Fominykh, BM, Naumov, SV & Marchenkova, EB 2023, 'Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals', Micromachines, Том. 14, № 10, 1888. https://doi.org/10.3390/mi14101888
Marchenkov, V. V., Lukoyanov, A. V., Baidak, S. T., Perevalova, A. N., Fominykh, B. M., Naumov, S. V., & Marchenkova, E. B. (2023). Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals. Micromachines, 14(10), [1888]. https://doi.org/10.3390/mi14101888 2072-666X Final All Open Access, Gold, Green https://www.scopus.com/inward/record.uri?eid=2-s2.0-85175032415&doi=10.3390%2fmi14101888&partnerID=40&md5=83f631b237bcbf12989c11ee329ce262 https://www.mdpi.com/2072-666X/14/10/1888/pdf?version=1696067690 http://elar.urfu.ru/handle/10995/130888 10.3390/mi14101888 85175032415 001099343200001 |
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| Язык |
en
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| Связанные ресурсы |
info:eu-repo/grantAgreement/RSF//22-42-02021
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| Права |
Open access (info:eu-repo/semantics/openAccess)
cc-by https://creativecommons.org/licenses/by/4.0/ |
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| Формат |
application/pdf
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Multidisciplinary Digital Publishing Institute (MDPI)
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| Источник |
Micromachines
Micromachines |
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