Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
| Заглавие |
Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
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| Автор |
Seredin, P. V.
Kurilo, N. Goloshchapov, D. L. Kashkarov, V. Lenshin, A. S. Buylov, N. Nesterov, D. Mizerov, A. Kukushkin, S. A. Timoshnev, S. Shubina, K. Y. Sobolev, M. S. |
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| Тематика |
ALXGA1-XN
GAN MBE PA NANOSCALE COLUMNAR PORSI SIC |
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| Описание |
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi and a hybrid substrate involving a silicon carbide layer grown with matched substitution of the atoms on the surface of porous silicon SiC/porSi/cSi. A complex analysis performed using a set of structural and spectroscopic techniques demonstrated that the epitaxial growth of the nuclear AlN layer on all types of the substrates in a N-enriched environment resulted in the formation of AlxGa1-xN/AlN heterostructures with a Ga-polar surface, which was realized only on the SiC/porSi/cSi substrate. The layer of AlxGa1-xN on cSi and porSi/cSi substrates was in the state of disordered alloy with an excess of gallium atom content. It was shown that a great difference in the lattice parameters of a substrate–film pair resulted not only in the appearance of a number of various defects but also in a considerable effect on the chemical process of the formation of the alloys, in our case, the AlxGa1-xN alloy. It was shown that nanoscale columns of AlxGa1-xN formed on SiC/porSi/cSi substrate were inclined relative to the c-axis, which was connected with the features of the formation of a SiC layer by the matched substitution of the atoms on the porous Si substrate, resulting in the formation of the inclined (111) SiC facets at the boundary of the (111) Si surface and pores in Si. Optical studies of the grown samples demonstrated that the optical band-to-band transition for the AlxGa1-xN alloy with Eg = 3.99 eVB was observed only for the heterostructure grown on the SiC/porSi/cSi substrate. A qualitative model is proposed to explain the difference in the formation of AlxGa1-xN layers on the substrates of cSi, porSi/cSi and SiC/porSi/cSi. The results obtained in our work demonstrate the availability of using SiC/porSi/cSi substrates for the integration of silicon technology and that used for the synthesis of nanoscale columnar AlxGa1-xN heterostructures using plasma-activated molecular-beam epitaxy with a nitrogen source. © 2023 by the authors.
Russian Science Foundation, RSF: 19-72-10007; Ministry of Science and Higher Education of the Russian Federation: 075-15-2021-1351, FSRM-2023-0006, FZGU-2023-0006 This work was carried out under the financial support of the Russian Science Foundation, grant 19-72-10007. Adjustment of the formation of the hybrid substrate was performed under the support of the Ministry of Science and Higher Education of Russia (grant No. FZGU-2023-0006). Synthesis of the samples using the MBE PA technique, as well as the study of heterostructures polarity were completed under the support of the Ministry of Science and Higher Education of Russia No. FSRM-2023-0006. As for access to scientific equipment and methodology of measurements and analysis, this study was carried out under the support of the Ministry of Science and Higher Education of Russia, contract No. 075-15-2021-1351. |
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| Дата |
2024-04-05T16:36:55Z
2024-04-05T16:36:55Z 2023 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) |info:eu-repo/semantics/publishedVersion |
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| Идентификатор |
Seredin, PV, Kurilo, N, Goloshchapov, DL, Kashkarov, V, Lenshin, AS, Buylov, N, Nesterov, D, Mizerov, A, Kukushkin, SA, Timoshnev, S, Shubina, KY & Sobolev, MS 2023, 'Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface', Photonics, Том. 10, № 11, 1209. https://doi.org/10.3390/photonics10111209
Seredin, P. V., Kurilo, N., Goloshchapov, D. L., Kashkarov, V., Lenshin, A. S., Buylov, N., Nesterov, D., Mizerov, A., Kukushkin, S. A., Timoshnev, S., Shubina, K. Y., & Sobolev, M. S. (2023). Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface. Photonics, 10(11), [1209]. https://doi.org/10.3390/photonics10111209 2304-6732 Final All Open Access, Gold https://www.scopus.com/inward/record.uri?eid=2-s2.0-85178086515&doi=10.3390%2fphotonics10111209&partnerID=40&md5=4f28833d51c927412e92de517280f4c8 https://www.mdpi.com/2304-6732/10/11/1209/pdf?version=1698669867 http://elar.urfu.ru/handle/10995/130997 10.3390/photonics10111209 85178086515 001123422100001 |
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| Язык |
en
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| Связанные ресурсы |
info:eu-repo/grantAgreement/RSF//19-72-10007
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| Права |
Open access (info:eu-repo/semantics/openAccess)
cc-by https://creativecommons.org/licenses/by/4.0/ |
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| Формат |
application/pdf
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| Издатель |
Multidisciplinary Digital Publishing Institute (MDPI)
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| Источник |
Photonics
Photonics |
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