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Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films

Электронный научный архив УРФУ

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Поле Значение
 
Заглавие Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films
 
Автор Kozhevnikova, N. S.
Maskaeva, L. N.
Enyashin, A. N.
Tyutyunnik, A. P.
Lipina, O. A.
Selyanin, I. O.
Markov, V. F.
 
Тематика CHEMICAL BATH DEPOSITION
FORMATION MECHANISM
P-TYPE CONDUCTIVITY
QUANTUM-CHEMICAL CALCULATIONS
THIN FILMS
TIN (II) SULFIDE
 
Описание Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. © Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F., 2023.
Ministry of Education and Science of the Russian Federation, Minobrnauka; Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences, ISSC UB RAS
PACS 81.10.Dn, 82.60.Lf, 82.70.Dd, 81.05.Hd ABSTRACT Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. KEYWORDS tin(II) sulfide, thin films, chemical bath deposition, p-type conductivity, quantum-chemical calculations, formation mechanism ACKNOWLEDGEMENTS This work was carried out in accordance with the scientific and research plans and state assignment of the ISSC UB RAS and Ural Federal University Program of Development within the Priority-2030 Program (Ministry of Science and Higher Education of the Russian Federation). FOR CITATION Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F. Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. Nanosystems: Phys. Chem. Math., 2023, 14 (6), 699–704.
 
Дата 2024-04-05T16:38:54Z
2024-04-05T16:38:54Z
2023
 
Тип Article
Journal article (info:eu-repo/semantics/article)
|info:eu-repo/semantics/publishedVersion
 
Идентификатор Kozhevnikova, N, Maskaeva, L, Enyashin, A, Tyutyunnik, A, Lipina, O, Selyanin, I & Markov, VF 2023, 'Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films', Nanosystems: Physics, Chemistry, Mathematics, Том. 14, № 6, стр. 699-704. https://doi.org/10.17586/2220-8054-2023-14-6-699-704
Kozhevnikova, N., Maskaeva, L., Enyashin, A., Tyutyunnik, A., Lipina, O., Selyanin, I., & Markov, V. F. (2023). Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. Nanosystems: Physics, Chemistry, Mathematics, 14(6), 699-704. https://doi.org/10.17586/2220-8054-2023-14-6-699-704
2220-8054
Final
All Open Access, Bronze
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85181744076&doi=10.17586%2f2220-8054-2023-14-6-699-704&partnerID=40&md5=5f61277535aed17d2ac76637b74afb52
http://nanojournal.ifmo.ru/en/wp-content/uploads/2023/12/NPCM146P699-704.pdf
http://elar.urfu.ru/handle/10995/131108
57597733
10.17586/2220-8054-2023-14-6-699-704
85181744076
001137162800011
 
Язык en
 
Права Open access (info:eu-repo/semantics/openAccess)
 
Формат application/pdf
 
Издатель ITMO University
 
Источник Nanosystems: Physics, Chemistry, Mathematics
Nanosystems: Physics, Chemistry, Mathematics