High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
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High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride
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| Автор |
Janse, van, Vuuren, A.
Mutali, A. Ibrayeva, A. Sohatsky, A. Skuratov, V. Akilbekov, A. Dauletbekova, A. Zdorovets, M. |
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| Тематика |
LATENT ION TRACKS
SI3N4 SILICON NITRIDE SWIFT HEAVY IONS TRANSMISSION ELECTRON MICROSCOPY (TEM) |
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| Описание |
At present, silicon nitride is the only nitride ceramic in which latent ion tracks resulting from swift heavy ion irradiation have been observed. Data related to the effects of SHIs on the nanocrystalline form of Si3N4 are sparse. The size of grains is known to play a role in the formation of latent ion tracks and other defects that result from SHI irradiation. In this investigation, the effects of irradiation with high-energy heavy ions on nanocrystalline silicon nitride is studied, using transmission electron microscopy techniques. The results suggest that threshold electronic stopping power, Set, lies within the range 12.3 ± 0.8 keV/nm to 15.2 ± 1.0 keV/nm, based on measurements of track radii. We compared the results to findings for polycrystalline Si3N4 irradiated under similar conditions. Our findings suggest that the radiation stability of silicon nitride is independent of grain size. © 2022 by the authors.
Ministry of Education and Science of the Russian Federation, Minobrnauka, (075-15-2021-709, RF-2296.61321X0037) Ministry of Education and Science of the Republic of Kazakhstan, (AP08856368) This research was funded by the Ministry of Education and Science of the Republic of Kazakhstan (No. AP08856368, “Radiation resistance of ceramics based on nitrides and carbides in relation to the impact of heavy ions with energies of fission fragments”) and was supported by the Ministry of Science and Higher Education of the Russian Federation—contract 075-15-2021-709, unique identifier of the project RF-2296.61321X0037 (equipment maintenance). |
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| Дата |
2024-04-08T11:08:04Z
2024-04-08T11:08:04Z 2022 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) Published version (info:eu-repo/semantics/publishedVersion) |
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| Идентификатор |
Janse van Vuuren, A, Mutali, A, Ibrayeva, A, Sohatsky, A, Skuratov, V, Akilbekov, A, Dauletbekova, A & Zdorovets, M 2022, 'High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride', Crystals, Том. 12, № 10, 1410. https://doi.org/10.3390/cryst12101410
Janse van Vuuren, A., Mutali, A., Ibrayeva, A., Sohatsky, A., Skuratov, V., Akilbekov, A., Dauletbekova, A., & Zdorovets, M. (2022). High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride. Crystals, 12(10), [1410]. https://doi.org/10.3390/cryst12101410 2073-4352 Final All Open Access; Gold Open Access; Green Open Access https://www.mdpi.com/2073-4352/12/10/1410/pdf?version=1666598828 https://www.mdpi.com/2073-4352/12/10/1410/pdf?version=1666598828 http://elar.urfu.ru/handle/10995/131570 10.3390/cryst12101410 85140766688 000874314300001 |
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| Язык |
en
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| Права |
Open access (info:eu-repo/semantics/openAccess)
cc-by https://creativecommons.org/licenses/by/4.0/ |
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| Формат |
application/pdf
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| Издатель |
MDPI
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| Источник |
Crystals
Crystals |
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