Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
Электронный научный архив УРФУ
Информация об архиве | Просмотр оригинала| Поле | Значение | |
| Заглавие |
Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
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| Автор |
Islamov, D. R.
Gritsenko, V. A. Perevalov, T. V. Pustovarov, V. A. Orlov, O. M. Chernikova, A. G. Markeev, A. M. Slesazeck, S. Schroeder, U. Mikolajick, T. Krasnikov, G. Y. |
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| Тематика |
DEFECTS
FERROELECTRIC HF0.5ZR0.5O2 LEAKAGE CURRENTS LUMINESCENCE OXYGEN VACANCIES DATA STORAGE EQUIPMENT DEFECTS FERROELECTRIC FILMS FERROELECTRIC THIN FILMS FERROELECTRICITY HAFNIUM OXIDES LEAKAGE CURRENTS LUMINESCENCE OXIDES ZIRCONIUM COMPOUNDS AB INITIO SIMULATIONS FERROELECTRIC MEMORY FERROELECTRIC PROPERTY FERROELECTRIC RESPONSE FIELD-INDUCED PHASE TRANSITION HIGH COERCIVE FIELD NON-VOLATILE MEMORY TRANSPORT EXPERIMENTS OXYGEN VACANCIES |
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| Описание |
The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the field cycling process are commonly observed and explained by the defect movement, defect generation and field induced phase transitions. In this work, the optical and transport experiments are combined with ab-initio simulations and transport modeling to validate that the defects which act as charge traps in ferroelectric active layers are oxygen vacancies. A new oxygen vacancy generation leads to a fast growth of leakage currents and a consequent degradation of the ferroelectric response in Hf0.5Zr0.5O2 films. Two possible pathways of the Hf0.5Zr0.5O2 ferroelectric property degradation are discussed. © 2018 Acta Materialia Inc.
Russian Science Foundation, RSF: 14-19-00192 O.M.O. and G.Ya.K. are grateful to Evgeniy N. Morozov for their help in the endurance measurements. V.A.G. was supported by the Russian Science Foundation (Grant No. 14-19-00192 ). The simulation was performed using a computing cluster of the Rzhanov Institute of Semiconductor Physics SB RAS. |
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| Дата |
2024-04-23T11:10:49Z
2024-04-23T11:10:49Z 2019 |
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| Тип |
Article
Journal article (info:eu-repo/semantics/article) info:eu-repo/semantics/acceptedVersion |
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| Идентификатор |
Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Pustovarov, V. A., Orlov, O. M., Chernikova, A. G., … Krasnikov, G. Y. (2019). Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films. Acta Materialia, 166, 47–55. doi:10.1016/j.actamat.2018.12.008
1359-6454 Final All Open Access, Green https://tud.qucosa.de/api/qucosa%3A81148/attachment/ATT-0/ http://elar.urfu.ru/handle/10995/132539 10.1016/j.actamat.2018.12.008 85058713122 000459358200005 |
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| Язык |
en
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| Права |
Open access (info:eu-repo/semantics/openAccess)
cc-by-nc-nd |
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| Формат |
application/pdf
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| Издатель |
Acta Materialia Inc
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| Источник |
Acta Materialia
Acta Materialia |
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